Datasheet > IRFS4228PBF

IRFS4228PBF

更新时间： 2024-09-11 01:19:55

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
10页	376K
描述
Advanced Process Technology

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中文翻译

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数据手册
替代型号

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IRFS4228PBF 数据手册

PD - 97231A

IRFS4228PbF

PDP SWITCH

IRFSL4228PbF

Features

Key Parameters

Advanced Process Technology

Key Parameters Optimized for PDP

Sustain, Energy Recovery and Pass

Switch Applications

V_DSmin

150

180

_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

I_RPmax @ T_C= 100°C

T_Jmax

Low E_PULSERating to Reduce Power

Dissipation in PDP Sustain, Energy

Recovery and Pass Switch Applications

Low Q_Gfor Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

170

175

°C

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for

Improved Ruggedness

D²Pak

IRFS4228PbF

Repetitive Avalanche Capability for

Robustness and Reliability

TO-262

IRFSL4228PbF

Gate

Drain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch

applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve

low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Max.

±30

Parameter

Units

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

330

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

170

Repetitive Peak Current

330

Power Dissipation

170

Power Dissipation

2.2

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

Units

°C/W

Junction-to-Case

R_θ

0.45

Junction-to-Ambient (PCB Mount) , D²Pak

R_θJA

* R_θJC(end of life) for D²Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Notes through are on page 10

www.irf.com

09/14/07

12 3 4 5 6 7...10

中文翻译

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IRFS4228PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFS4228TRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Me

与IRFS4228PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFS4228TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
IRFS4229	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Me
IRFS4229PBF	INFINEON	获取价格	PDP SWITCH
IRFS4229TRL	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Me
IRFS4229TRLPBF	INFINEON	获取价格	Advanced Process Technology
IRFS4229TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Me
IRFS42N20D	INFINEON	获取价格	High frequency DC-DC converters
IRFS42N20DPBF	INFINEON	获取价格	暂无描述
IRFS42N20DTRL	INFINEON	获取价格	暂无描述
IRFS42N20DTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42.6A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon,

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