Datasheet > IRFS4321

IRFS4321

更新时间： 2024-09-15 14:54:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	362K
描述
150V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

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中文翻译

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数据手册

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IRFS4321 数据手册

PD - 97105C

IRFS4321PbF

IRFSL4321PbF

HEXFET^®Power MOSFET

Applications

l Motion Control Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

150V

12m

15m

85A

max.

Benefits

I_D

l Low R_DSONReduces Losses

l Low Gate Charge Improves the Switching

Performance

l Improved Diode Recovery Improves Switching &

EMI Performance

l 30V Gate Voltage Rating Improves Robustness

l Fully Characterized Avalanche SOA

D²Pak

IRFS4321PbF

TO-262

IRFSL4321PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current d

Max.

85 c

Units

330

P_D@T_C= 25°C

350

Maximum Power Dissipation

Linear Derating Factor

2.3

W/°C

V_GS

±30

Gate-to-Source Voltage

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

120

°C

T_J

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Thermal Resistance

Parameter

Junction-to-Case g

Junction-to-Ambient g

Typ.

Max.

0.43*

Units

R_θJC

R_θJA

–––

°C/W

* R_θJC(end of life) for D²Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Notes through ꢀare on page 2

www.irf.com

12/9/10

12 3 4 5 6 7...11

中文翻译

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