Datasheet > IRFS4310Z

IRFS4310Z

更新时间： 2024-09-15 11:13:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	329K
描述
100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

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中文翻译

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数据手册

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IRFS4310Z 数据手册

PD - 97115D

IRFB4310ZPbF

IRFS4310ZPbF

IRFSL4310ZPbF

HEXFET^®Power MOSFET

Applications

V_DSS

R_DS(on)typ.

max.

100V

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

4.8m

6.0m

I_D

127A

(Silicon Limited)

I_D

120A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRFS4310ZPbF

TO-262

IRFSL4310ZPbF

TO-220AB

IRFB4310ZPbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

127c

90c

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

120

560

P_D@T_C= 25°C

250

Maximum Power Dissipation

1.7

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

475

Avalanche Currentꢀc

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.6

Units

R_JC

Junction-to-Case k

R_CS

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220 k

0.50

–––

°C/W

R_JA

Junction-to-Ambient (PCB Mount) , D²Pak jk

R_JA

–––

www.irf.com

4/23/12

12 3 4 5 6 7...12

中文翻译

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