Datasheet > IRFS4229PBF

IRFS4229PBF

更新时间： 2024-09-10 03:15:23

品牌	Logo	应用领域
英飞凌 - INFINEON		开关光电二极管
页数	文件大小	规格书
9页	239K
描述
PDP SWITCH

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中文翻译

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数据手册
替代型号

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IRFS4229PBF 数据手册

PD - 97080

IRFS4229PbF

PDP SWITCH

Features

Key Parameters

Advanced Process Technology

V_DSmin

250

300

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

Low E_PULSERating to Reduce Power

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

V_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

I_RPmax @ T_C= 100°C

T_Jmax

175

°C

Low Q_Gfor Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

Short Fall & Rise Times for Fast Switching

l175°C Operating Junction Temperature for

Improved Ruggedness

Repetitive Avalanche Capability for Robustness

and Reliability

D²Pak

Gate

Drain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch

applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve

low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Max.

Parameter

Gate-to-Source Voltage

Units

V_GS

±30

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

180

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

Repetitive Peak Current

330

Power Dissipation

190

Power Dissipation

2.2

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

Max.

0.45*

Units

Junction-to-Case

R_θ

–––

Junction-to-Ambient

* R_θJC(end of life) for D²Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Notes through ꢀare on page 9

www.irf.com

04/12/06

12 3 4 5 6 7...9

中文翻译

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IRFS4229PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFS4229TRLPBF	INFINEON	类似代替	Advanced Process Technology
IRF644SPBF	VISHAY	功能相似	Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met

与IRFS4229PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFS4229TRL	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Me
IRFS4229TRLPBF	INFINEON	获取价格	Advanced Process Technology
IRFS4229TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Me
IRFS42N20D	INFINEON	获取价格	High frequency DC-DC converters
IRFS42N20DPBF	INFINEON	获取价格	暂无描述
IRFS42N20DTRL	INFINEON	获取价格	暂无描述
IRFS42N20DTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42.6A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon,
IRFS430	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRFS4310	FREESCALE	获取价格	HEXFET Power MOSFET
IRFS4310	INFINEON	获取价格	HEXFET Power MOSFET

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