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IRFS4321TRLPBF PDF预览

IRFS4321TRLPBF

更新时间: 2024-09-14 12:28:11
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
10页 359K
描述
High Efficiency Synchronous Rectification in SMPS

IRFS4321TRLPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.78雪崩能效等级(Eas):120 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):83 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.015 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):330 W最大脉冲漏极电流 (IDM):330 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFS4321TRLPBF 数据手册

 浏览型号IRFS4321TRLPBF的Datasheet PDF文件第2页浏览型号IRFS4321TRLPBF的Datasheet PDF文件第3页浏览型号IRFS4321TRLPBF的Datasheet PDF文件第4页浏览型号IRFS4321TRLPBF的Datasheet PDF文件第5页浏览型号IRFS4321TRLPBF的Datasheet PDF文件第6页浏览型号IRFS4321TRLPBF的Datasheet PDF文件第7页 
PD - 97105C  
IRFS4321PbF  
IRFSL4321PbF  
HEXFET® Power MOSFET  
Applications  
l Motion Control Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l Hard Switched and High Frequency Circuits  
VDSS  
RDS(on) typ.  
150V  
12m  
15m  
85A  
:
:
c
max.  
Benefits  
ID  
l Low RDSON Reduces Losses  
l Low Gate Charge Improves the Switching  
Performance  
l Improved Diode Recovery Improves Switching &  
EMI Performance  
D
S
D
D
l 30V Gate Voltage Rating Improves Robustness  
l Fully Characterized Avalanche SOA  
S
S
D
G
D
G
G
D2Pak  
IRFS4321PbF  
TO-262  
IRFSL4321PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current d  
Max.  
85 c  
60  
Units  
A
330  
PD @TC = 25°C  
350  
Maximum Power Dissipation  
Linear Derating Factor  
W
2.3  
W/°C  
V
VGS  
±30  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy e  
EAS (Thermally limited)  
120  
mJ  
°C  
TJ  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
Thermal Resistance  
Parameter  
Junction-to-Case g  
Junction-to-Ambient g  
Typ.  
Max.  
0.43*  
40  
Units  
RθJC  
RθJA  
–––  
–––  
°C/W  
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature  
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.  
Notes  through are on page 2  
www.irf.com  
1
12/9/10  

IRFS4321TRLPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFS4321TRRPBF INFINEON

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