IRFS450

更新时间： 2024-10-29 22:51:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	688K
描述
500V N-Channel MOSFET

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数据手册

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IRFS450 数据手册

November 2001

IRFS450B

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies,

power factor correction and electronic lamp ballasts based

on half bridge.

•

9.6A, 500V, R

= 0.39Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 87 nC)

Low Crss ( typical 60 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

TO-3PF

IRFS Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRFS450B

500

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

9.6

- Continuous (T = 100°C)

6.1

(Note 1)

Drain Current

- Pulsed

38.4

± 30

990

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

9.6

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

9.6

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.77

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.3

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

θJC

θJA

Rev. B, November 2001

12 3 4 5 6 7 8

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