Datasheet > IRFS4710

IRFS4710

更新时间： 2024-10-31 22:22:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	245K
描述
Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A)

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中文翻译

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数据手册

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IRFS4710 数据手册

PD- 94080

IRFB4710

IRFS4710

IRFSL4710

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

l Motor Control

V_DSS

100V

R_DS(on)max

I_D

75A

0.014Ω

l Uninterrutible Power Supplies

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRFS4710

TO-262

IRFSL4710

TO-220AB

IRFB4710

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

300

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

200

Linear Derating Factor

1.4

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

8.2

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

0.74

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

Junction-to-Ambient

Notes through are on page 11

www.irf.com

3/16/01

12 3 4 5 6 7...11

中文翻译

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IRFS520A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS520A	SAMSUNG	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
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IRFS522	SAMSUNG	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Meta