IRFS530

更新时间： 2024-11-25 22:40:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管局域网
页数	文件大小	规格书
7页	263K
描述
Advanced Power MOSFET

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中文翻译

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数据手册
替代型号

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IRFS530 数据手册

IRFS530A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.11

I_D= 10.7 A

Improved Gate Charge

Extended Safe Operating Area

TO-220F

175 C Operating Temperature

Lower Leakage Current : 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.092 (Typ.)

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

Units

V_DSS

Drain-to-Source Voltage

100

10.7

7.6

Continuous Drain Current (T_C=25

)

I_D

Continuous Drain Current (T_C=100

Drain Current-Pulsed

)

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

229

10.7

3.2

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

6.5

Total Power Dissipation (T =25

)

P_D

T_J, T_STG

T_L

Linear Derating Factor

0.21

Operating Junction and

Storage Temperature Range

- 55 to +175

300

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

4.69

62.5

Junction-to-Case

R_q

Junction-to-Ambient

Rev. B

12 3 4 5 6 7

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IRFS530 替代型号

型号	品牌	替代类型	描述	数据表
IRFS530A	FAIRCHILD	功能相似	Advanced Power MOSFET

与IRFS530相关器件

型号	品牌	获取价格	描述	数据表
IRFS530A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS530A_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 10.7A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, M
IRFS531	SAMSUNG	获取价格	Power Field-Effect Transistor, 9.7A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IRFS533	SAMSUNG	获取价格	Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Meta
IRFS540	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS540	SAMSUNG	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRFS540A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS540AT	FAIRCHILD	获取价格	暂无描述
IRFS541	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 17A I(D) \| SOT-186
IRFS542	SAMSUNG	获取价格	Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta