Datasheet > IRFS52N15DHR

IRFS52N15DHR

更新时间： 2024-11-26 21:13:23

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
12页	285K
描述
Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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IRFS52N15DHR 数据手册

PD - 94815

IRFB52N15DPbF

IRFS52N15D

SMPS MOSFET

IRFSL52N15D

Applications

HEXFET^®Power MOSFET

l High frequency DC-DC converters

l Lead-Free ( only the TO-220AB version

is currently available in a lead-free

configuration)

V_DSS

150V

R_DS(on)max

I_D

60A

0.032Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

TO-262

TO-220AB

IRFB52N15DPbF

IRFS52N15D

IRFSL52N15D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

240

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

320

Linear Derating Factor

2.1

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.5

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.47

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

Junction-to-Ambient

–––

Notes through are on page 11

www.irf.com

11/5/03

12 3 4 5 6 7...12

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