Datasheet > IRFS52N15DTRRP

IRFS52N15DTRRP

更新时间： 2024-11-26 21:09:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	321K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

数据手册
替代型号

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IRFS52N15DTRRP 数据手册

PD - 97002A

IRFB52N15DPbF

IRFS52N15DPbF

IRFSL52N15DPbF

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

l Plasma Display Panel

Key Parameters

V_DS

150

200

_{DS (Avalanche)}min.

_DS(ON)max @ 10V

Benefits

l Low Gate-to-Drain Charge to

Reduce\ Switching Losses

l Fully Characterized Capacitance

Including Effective C_OSSto Simplify

Design, (See App. Note AN1001)

l Fully Characterized Avalanche

Voltage and Current

T_Jmax

175

°C

l Lead-Free

D²Pak

IRFS52N15DPbF IRFSL52N15DPbF

TO-262

TO-220AB

IRFB52N15DPbF

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

51*

36*

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

240

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

230*

Linear Derating Factor

1.5*

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.5

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.47*

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

Junction-to-Ambient

–––

* R_θJC(end of life) for D²Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Notes through are on page 11

www.irf.com

09/22/10

12 3 4 5 6 7...11

中文翻译

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IRFS52N15DTRRP 替代型号

型号	品牌	替代类型	描述	数据表
IRFS52N15DTRLP	INFINEON	类似代替	MOSFET N-CH 150V 51A D2PAK

与IRFS52N15DTRRP相关器件

型号	品牌	获取价格	描述	数据表
IRFS52N15DTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 51A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
IRFS530	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS530	SAMSUNG	获取价格	Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRFS530A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS530A_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 10.7A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, M
IRFS531	SAMSUNG	获取价格	Power Field-Effect Transistor, 9.7A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IRFS533	SAMSUNG	获取价格	Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Meta
IRFS540	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS540	SAMSUNG	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRFS540A	FAIRCHILD	获取价格	Advanced Power MOSFET