Datasheet > IRFS510A

IRFS510A

更新时间： 2024-01-01 11:56:22

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	255K
描述
Advanced Power MOSFET

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IRFS510A 数据手册

IRFS510A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.4

I_D= 4.5 A

Improved Gate Charge

Extended Safe Operating Area

TO-220F

175 C Operating Temperature

Lower Leakage Current : 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.289 (Typ.)

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

Units

V_DSS

100

4.5

3.2

Continuous Drain Current (T_C=25 C)

I_D

)

Continuous Drain Current (T_C=100

Drain Current-Pulsed

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

4.5

2.1

6.5

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25

Linear Derating Factor

)

P_D

T_J, T_STG

T_L

0.14

Operating Junction and

- 55 to +175

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

300

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

6.98

62.5

Junction-to-Case

R_q

Junction-to-Ambient

Rev. B

12 3 4 5 6 7

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