Datasheet > IRFS4710PBF

IRFS4710PBF

更新时间： 2024-11-26 04:00:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	664K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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技术参数
数据手册

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IRFS4710PBF 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

IRFS4710PBF 数据手册

PD-95146

IRFB4710PbF

IRFS4710PbF

IRFSL4710PbF

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

l Motor Control

V_DSS

100V

R_DS(on)max

I_D

75A

0.014Ω

l Uninterrutible Power Supplies

l Lead-Free

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRFS4710

TO-262

IRFSL4710

TO-220AB

IRFB4710

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

300

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

200

Linear Derating Factor

1.4

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

8.2

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

Max.

0.74

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

°C/W

Junction-to-Ambient

Notes through are on page 11

www.irf.com

04/22/04

12 3 4 5 6 7...12

中文翻译

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与IRFS4710PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFS4710TRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Me
IRFS4710TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor
IRFS510	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS510A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS520	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 7.2A I(D) \| SOT-186
IRFS520A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS520A	SAMSUNG	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFS521	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 7.2A I(D) \| SOT-186
IRFS522	SAMSUNG	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Meta
IRFS523	SAMSUNG	获取价格	Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal