Datasheet > IRFS510

IRFS510

更新时间： 2024-11-25 22:40:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	255K
描述
Advanced Power MOSFET

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数据手册

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IRFS510 数据手册

IRFS510A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.4

I_D= 4.5 A

Improved Gate Charge

Extended Safe Operating Area

TO-220F

175 C Operating Temperature

Lower Leakage Current : 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.289 (Typ.)

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

Units

V_DSS

100

4.5

3.2

Continuous Drain Current (T_C=25 C)

I_D

)

Continuous Drain Current (T_C=100

Drain Current-Pulsed

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

4.5

2.1

6.5

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25

Linear Derating Factor

)

P_D

T_J, T_STG

T_L

0.14

Operating Junction and

- 55 to +175

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

300

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

6.98

62.5

Junction-to-Case

R_q

Junction-to-Ambient

Rev. B

12 3 4 5 6 7

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与IRFS510相关器件

型号	品牌	获取价格	描述	数据表
IRFS510A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS520	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 7.2A I(D) \| SOT-186
IRFS520A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS520A	SAMSUNG	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFS521	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 7.2A I(D) \| SOT-186
IRFS522	SAMSUNG	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Meta
IRFS523	SAMSUNG	获取价格	Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal
IRFS52N15D	INFINEON	获取价格	Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
IRFS52N15DHR	INFINEON	获取价格	Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
IRFS52N15DPBF	INFINEON	获取价格	HEXFET Power MOSFET