生命周期: | Transferred | 零件包装代码: | TO-220F |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.46 | 雪崩能效等级(Eas): | 54 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 4.5 A |
最大漏极电流 (ID): | 4.5 A | 最大漏源导通电阻: | 0.4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 21 W | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS510A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET |
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IRFS520 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7.2A I(D) | SOT-186 |
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IRFS520A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET |
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IRFS520A | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met |
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IRFS521 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 7.2A I(D) | SOT-186 |
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IRFS522 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Meta |
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IRFS523 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal |
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IRFS52N15D | INFINEON |
获取价格 |
Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) |
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IRFS52N15DHR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Me |
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IRFS52N15DPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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