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IRFS510

更新时间: 2024-02-07 13:01:56
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 255K
描述
Advanced Power MOSFET

IRFS510 技术参数

生命周期:Transferred零件包装代码:TO-220F
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.46雪崩能效等级(Eas):54 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):4.5 A
最大漏极电流 (ID):4.5 A最大漏源导通电阻:0.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):21 W最大脉冲漏极电流 (IDM):18 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON

IRFS510 数据手册

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IRFS510A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.4  
ID = 4.5 A  
Improved Gate Charge  
Extended Safe Operating Area  
TO-220F  
O
175 C Operating Temperature  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V  
W
Lower RDS(ON) : 0.289 (Typ.)  
1
2
3
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
Units  
VDSS  
V
100  
4.5  
3.2  
20  
O
Continuous Drain Current (TC=25 C)  
ID  
A
O
C
)
Continuous Drain Current (TC=100  
Drain Current-Pulsed  
1
IDM  
VGS  
EAS  
IAR  
O
A
V
+
_
Gate-to-Source Voltage  
20  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
54  
mJ  
A
O
1
4.5  
2.1  
6.5  
21  
O
EAR  
dv/dt  
1
Repetitive Avalanche Energy  
mJ  
V/ns  
O
3
Peak Diode Recovery dv/dt  
O
O
Total Power Dissipation (TC=25  
Linear Derating Factor  
)
C
W
PD  
TJ , TSTG  
TL  
O
0.14  
W/  
C
Operating Junction and  
- 55 to +175  
Storage Temperature Range  
O
C
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
300  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
Rq  
--  
--  
6.98  
62.5  
Junction-to-Case  
JC  
O
C
/W  
Rq  
Junction-to-Ambient  
JA  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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