Datasheet > IRFS4610TRRPBF

IRFS4610TRRPBF

更新时间： 2024-11-26 18:53:43

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
11页	395K
描述
Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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数据手册
替代型号

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IRFS4610TRRPBF 数据手册

PD - 95936C

IRFB4610PbF

IRFS4610PbF

IRFSL4610PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

100V

11m

14m

73A

max.

I_D

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRFS4610PbF

TO-262

IRFSL4610PbF

TO-220AB

IRFB4610PbF

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

Units

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_DM

290

190

Pulsed Drain Current

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

1.3

W/°C

± 20

V_GS

Gate-to-Source Voltage

7.6

Peak Diode Recovery

dV/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

370

Avalanche Current

I_AR

See Fig. 14, 15, 16a, 16b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.77

–––

Units

R_θ

Junction-to-Case

Case-to-Sink, Flat Greased Surface , TO-220

0.50

–––

°C/W

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

–––

www.irf.com

09/16/10

12 3 4 5 6 7...11

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IRFS4610TRRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFS4610TRLPBF	INFINEON	功能相似	High Efficiency Synchronous Rectification in SMPS

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