Datasheet > IRFS4510PbF

IRFS4510PbF

更新时间： 2024-09-13 12:36:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	265K
描述
HEXFETPower MOSFET

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中文翻译

获取价格

技术参数
数据手册
替代型号

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IRFS4510PbF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	LEAD FREE, D2PAK-3/2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	7.87
Base Number Matches：	1

IRFS4510PbF 数据手册

PD - 97771

IRFS4510PbF

IRFSL4510PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

100V

11.3m

13.9m

61A

max.

l Hard Switched and High Frequency Circuits

I_{D (Silicon Limited)}

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRFS4510PbF

TO-262

IRFSL4510PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Pulsed Drain Current

250

P_D@T_C= 25°C

140

Maximum Power Dissipation

Linear Derating Factor

0.95

W/°C

V_GS

± 20

Gate-to-Source Voltage

3.2

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

130

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θ

Junction-to-Case

°C/W

R_θJA

–––

Junction-to-Ambient

www.irf.com

4/10/12

12 3 4 5 6 7...10

中文翻译

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IRFS4510PbF 替代型号

型号	品牌	替代类型	描述	数据表
IRFS4510TRLPBF	INFINEON	功能相似	Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, M

与IRFS4510PbF相关器件

型号	品牌	获取价格	描述	数据表
IRFS4510TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, M
IRFS4510TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, M
IRFS452	SAMSUNG	获取价格	Power Field-Effect Transistor, 8.3A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Met
IRFS453	SAMSUNG	获取价格	Power Field-Effect Transistor, 8.3A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Met
IRFS460	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 12.4A I(D) \| TO-247VAR
IRFS4610	INFINEON	获取价格	IRFB4610 IRFS4610 IRFSL4610
IRFS4610PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS4610TRL	INFINEON	获取价格	Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Me
IRFS4610TRLPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS4610TRR	INFINEON	获取价格	Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Me