Datasheet > IRFS4410Z

IRFS4410Z

更新时间： 2024-05-23 22:22:12

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	525K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:97A;Vgs(th)(V):±20;漏源导通电阻:9mΩ@10V

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IRFS4410Z 数据手册

UMW

IRFS4410Z

N-Channel

100 V

MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

TO-263

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

l RoHSCompliant,Halogen-Free

100V

l V_DS

l I_D(at V_GS=10V)=97A

l R_DS(ON)(at V_GS=10V) < 9mΩ

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Pulsed Drain Current

I_D@ T_C= 100°C

I_DM

390

230

1.5

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

± 20

V_GS

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

242

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy

Avalanche Current

E_{AS (Thermally limited)}

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

Parameter

Junction-to-Case

E_AR

Units

Symbol

Typ.

0.50

Max.

0.65

R_θ

Case-to-Sink, Flat Greased Surface , TO-220

°C/W

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

中文翻译

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