IRFS4410Z

更新时间： 2024-09-14 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
11页	409K
描述
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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数据手册

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IRFS4410Z 数据手册

PD - 96902A

IRFB4410

IRFS4410

IRFSL4410

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

100V

8.0m

10m

Benefits

I_D

96A

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

G D S

D²Pak

IRFS4410

TO-262

IRFSL4410

TO-220AB

IRFB4410

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current d

Max.

96c

Units

68c

380

P_D@T_C= 25°C

250

Maximum Power Dissipation

Linear Derating Factor

1.6

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

220

Avalanche Currentꢀc

I_AR

See Fig. 14, 15, 16a, 16b

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.61

–––

Units

R_θJC

Junction-to-Case k

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220 k

–––

Junction-to-Ambient (PCB Mount) , D Pak

www.irf.com

11/4/04

12 3 4 5 6 7...11

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与IRFS4410Z相关器件

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IRFS4410ZTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
IRFS4410ZTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
IRFS442	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.8A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Met
IRFS443	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.8A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Met
IRFS450	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRFS450A	FAIRCHILD	获取价格	Advanced Power MOSFET (500V, 0.4ohm, 9.6A)
IRFS450B	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRFS450B	ONSEMI	获取价格	分立式 MOSFET