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IRFS4310TRRPBF PDF预览

IRFS4310TRRPBF

更新时间: 2024-09-14 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 380K
描述
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

IRFS4310TRRPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.08
Is Samacsys:N雪崩能效等级(Eas):980 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):130 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):550 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFS4310TRRPBF 数据手册

 浏览型号IRFS4310TRRPBF的Datasheet PDF文件第2页浏览型号IRFS4310TRRPBF的Datasheet PDF文件第3页浏览型号IRFS4310TRRPBF的Datasheet PDF文件第4页浏览型号IRFS4310TRRPBF的Datasheet PDF文件第5页浏览型号IRFS4310TRRPBF的Datasheet PDF文件第6页浏览型号IRFS4310TRRPBF的Datasheet PDF文件第7页 
PD - 14275D  
IRFB4310PbF  
IRFS4310PbF  
IRFSL4310PbF  
HEXFET® Power MOSFET  
Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
VDSS  
RDS(on) typ.  
max.  
100V  
l Hard Switched and High Frequency Circuits  
5.6m  
7.0m  
130A  
G
ID  
S
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
S
S
D
D
D
G
G
G
D2Pak  
IRFS4310PbF  
TO-262  
IRFSL4310PbF  
TO-220AB  
IRFB4310PbF  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
130  
Units  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
92  
550  
Pulsed Drain Current  
PD @TC = 25°C  
300  
W
Maximum Power Dissipation  
Linear Derating Factor  
2.0  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
14  
Peak Diode Recovery  
dV/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
980  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.50  
–––  
62  
Units  
Rθ  
Junction-to-Case  
JC  
CS  
JA  
JA  
Rθ  
Rθ  
Rθ  
0.50  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface , TO-220  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
–––  
40  
www.irf.com  
1
01/31/06  

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