IRFS4310

更新时间： 2024-09-13 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	384K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRFS4310 数据手册

PD - 96894

IRFB4310

IRFS4310

IRFSL4310

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

100V

5.6m:

7.0m:

140A

max.

Benefits

l Worldwide Best R_DS(on)in TO-220

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

I_D

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

G D S

D²Pak

IRFS4310

TO-262

IRFSL4310

TO-220AB

IRFB4310

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

140c

97 c

550

Units

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current d

P_D@T_C= 25°C

330

Maximum Power Dissipation

Linear Derating Factor

2.2

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery f

Operating Junction and

dV/dt

T_J

V/ns

°C

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

980

Avalanche Currentꢀc

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.45

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case k

Case-to-Sink, Flat Greased Surface , TO-220

0.50

–––

°C/W

Junction-to-Ambient, TO-220 k

Junction-to-Ambient (PCB Mount) , D²Pak jk

–––

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IRFS4310 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFS4310	INFINEON	功能相似	HEXFET Power MOSFET
IRFS4310TRLPBF	INFINEON	功能相似	High Efficiency Synchronous Rectification in SMPS
IRFS4310PBF	INFINEON	功能相似	HEXFET㈢Power MOSFET

与IRFS4310相关器件

型号	品牌	获取价格	描述	数据表
IRFS4310HR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Me
IRFS4310PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRFS4310PBF_15	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS4310RPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS4310TRLPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS4310TRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFS4310TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Me
IRFS4310Z	INFINEON	获取价格	100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封
IRFS4310ZPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS4310ZTRLPBF	INFINEON	获取价格	暂无描述