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IRFS4227PBF PDF预览

IRFS4227PBF

更新时间： 2024-09-10 11:09:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管功率场效应晶体管光电二极管
页数 文件大小 规格书
9页 301K
描述
PDP SWITCH

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中文翻译

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IRFS4227PBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：LEAD FREE, D2PAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：7.58
Is Samacsys：NBase Number Matches：1

IRFS4227PBF 数据手册

 浏览型号IRFS4227PBF的Datasheet PDF文件第2页浏览型号IRFS4227PBF的Datasheet PDF文件第3页浏览型号IRFS4227PBF的Datasheet PDF文件第4页浏览型号IRFS4227PBF的Datasheet PDF文件第5页浏览型号IRFS4227PBF的Datasheet PDF文件第6页浏览型号IRFS4227PBF的Datasheet PDF文件第7页 
PD - 97037  
IRFS4227PbF  
PDP SWITCH  
Features  
Key Parameters  
l
Advanced Process Technology  
VDS max  
DS (Avalanche) typ.  
DS(ON) typ. @ 10V  
RP max @ TC= 100°C  
200  
240  
22  
V
V
l
Key Parameters Optimized for PDP Sustain,  
Energy Recovery and Pass Switch Applications  
Low EPULSE Rating to Reduce Power  
Dissipation in PDP Sustain, Energy Recovery  
and Pass Switch Applications  
V
l
m:  
A
R
I
130  
175  
TJ max  
°C  
l
l
Low QG for Fast Response  
High Repetitive Peak Current Capability for  
Reliable Operation  
D
D
l
Short Fall & Rise Times for Fast Switching  
175°C Operating Junction Temperature for  
Improved Ruggedness  
l
S
G
D
l
Repetitive Avalanche Capability for Robustness  
G
and Reliability  
S
D2Pak  
G
D
S
Gate  
Drain  
Source  
Description  
This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch  
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve  
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C  
operating junction temperature and high repetitive peak current capability. These features combine to  
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.  
Absolute Maximum Ratings  
Max.  
±30  
Parameter  
Gate-to-Source Voltage  
Units  
VGS  
V
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current c  
62  
44  
260  
IRP @ TC = 100°C  
PD @TC = 25°C  
PD @TC = 100°C  
130  
Repetitive Peak Current g  
Power Dissipation  
330  
W
190  
Power Dissipation  
2.2  
Linear Derating Factor  
W/°C  
°C  
TJ  
-40 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
300  
10lbxin (1.1Nxm)  
N
Thermal Resistance  
Parameter  
Junction-to-Case f  
Typ.  
Max.  
0.45*  
40  
Units  
RθJC  
RθJA  
–––  
–––  
Junction-to-Ambient (PCB Mounted) fh  
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature  
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.  
Notes  through †are on page 8  
www.irf.com  
1
9/27/05  
1234567...9

中文翻译

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IRFS4227PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFS4227TRLPBF INFINEON

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