Datasheet > IRFS4227

IRFS4227

更新时间： 2024-09-11 11:14:27

品牌	Logo	应用领域
英飞凌 - INFINEON		开关光电二极管
页数	文件大小	规格书
11页	366K
描述
200V 单个 N 通道 HEXFET Power MOSFET PDP 开关, 采用 D2-Pak 封装

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IRFS4227 数据手册

PD - 96131A

IRFS4227PbF

PDP SWITCH

IRFSL4227PbF

Features

Key Parameters

Advanced Process Technology

V_DSmax

200

240

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

Low E_PULSERating to Reduce Power

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

V_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

I_RPmax @ T_C= 100°C

T_Jmax

130

175

°C

Low Q_Gfor Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for

Improved Ruggedness

Repetitive Avalanche Capability for

Robustness and Reliability

D²Pak

IRFS4227PbF

TO-262

IRFSL4227PbF

Gate

Drain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch

applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to

achievelowon-resistancepersiliconareaandlowE_PULSErating.AdditionalfeaturesofthisMOSFETare

175°C operating junction temperature and high repetitive peak current capability. These features

combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications

Absolute Maximum Ratings

Max.

±30

Parameter

Units

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

260

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

130

Repetitive Peak Current

330

Power Dissipation

190

Power Dissipation

2.2

Linear Derating Factor

W/°C

T_J

-40 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.45*

Units

Junction-to-Case

R_θ

Junction-to-Ambient (PCB Mounted) D²Pak

R_θJA

–––

* R_θJC(end of life) for D²Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Notes through are on page 8

www.irf.com

12/06/08

12 3 4 5 6 7...11

中文翻译

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与IRFS4227相关器件

型号	品牌	获取价格	描述	数据表
IRFS4227PBF	INFINEON	获取价格	PDP SWITCH
IRFS4227TRLPBF	INFINEON	获取价格	Advanced Process Technology
IRFS4227TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Me
IRFS4228PBF	INFINEON	获取价格	Advanced Process Technology
IRFS4228TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
IRFS4229	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Me
IRFS4229PBF	INFINEON	获取价格	PDP SWITCH
IRFS4229TRL	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Me
IRFS4229TRLPBF	INFINEON	获取价格	Advanced Process Technology
IRFS4229TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Me

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