Datasheet > IRFS4127

IRFS4127

更新时间： 2023-09-03 20:34:43

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
11页	364K
描述
200V 单个 N 通道 HEXFET Power MOSFET 开关, 采用D2-Pak 封装

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中文翻译

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数据手册

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IRFS4127 数据手册

PD - 96177

IRFS4127PbF

IRFSL4127PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

200V

18.6m

22m

R_DS(on)typ.

max.

l Hard Switched and High Frequency Circuits

I_D

72A

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRFS4127PbF

TO-262

IRFSL4127PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

300

375

2.5

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

250

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.4

Units

R_θJC

Junction-to-Case

°C/W

R_θJA

–––

Junction-to-Ambient

www.irf.com

09/16/08

12 3 4 5 6 7...11

中文翻译

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