Datasheet > IRFS4020

IRFS4020

更新时间： 2023-09-03 20:31:26

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	340K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFS4020 数据手册

PD - 97393

IRFS4020PbF

DIGITAL AUDIO MOSFET

IRFSL4020PbF

Features

Key Parameters

• Key parameters optimized for Class-D audio

amplifier applications

V_DS

200

mΩ

_DS(ON)typ. @ 10V

• Low R_DSONfor improved efficiency

• Low Q_Gand Q_SWfor better THD and improved

efficiency

Q_gtyp.

Ω

_swtyp.

_G(int)typ.

T_Jmax

6.7

3.2

175

°C

• Low Q_RRfor better THD and lower EMI

• 175°C operating junction temperature for

ruggedness

• Can deliver up to 300W per channel into 8Ω load in

half-bridge configuration amplifier

D²Pak

TO-262

IRFSL4020PbF

IRFS4020PbF

Gate

Drain

Source

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

200

±20

Units

V_DS

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

P_D@T_C= 25°C

P_D@T_C= 100°C

100

Power Dissipation

Linear Derating Factor

0.70

W/°C

°C

T_J

Operating Junction and

Storage Temperature Range

-55 to + 175

T_STG

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Thermal Resistance

Parameter

Typ.

–––

Max.

1.43

Units

°C/W

Junction-to-Case

R_θJC

Junction-to-Ambient (PCB Mount)

R_θ

Notes through ꢀare on page 2

www.irf.com

05/14/09

12 3 4 5 6 7...10

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IRFS4020 替代型号

型号	品牌	替代类型	描述	数据表
IRFS4020PBF	INFINEON	功能相似	Key parameters optimized for Class-D audio amplifier applications
IRFS4020TRLPBF	INFINEON	功能相似	Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me

与IRFS4020相关器件

型号	品牌	获取价格	描述	数据表
IRFS4020PBF	INFINEON	获取价格	Key parameters optimized for Class-D audio amplifier applications
IRFS4020PBF_15	INFINEON	获取价格	Key parameters optimized for Class-D audio amplifier applications
IRFS4020TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me
IRFS4115	INFINEON	获取价格	Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, M
IRFS4115-7P	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRFS4115-7PPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS4115PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS4115TRLPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS4115TRR	INFINEON	获取价格	Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, M
IRFS4115TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, M

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