Datasheet > IRFS4115PBF

IRFS4115PBF

更新时间： 2024-02-01 07:39:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	392K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFS4115PBF 数据手册

PD - 96198

IRFS4115PbF

IRFSL4115PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

V_DSS

R_DS(on)typ.

150V

10.3m

12.1m

99A

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

max.

I_D

(Silicon Limited)

Benefits

I_{D (Package Limited)}

195A

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRFS4115PbF

TO-262

IRFSL4115PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

195

396

375

2.5

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

220

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.4

Units

R_θJC

Junction-to-Case

°C/W

R_θJA

–––

Junction-to-Ambient

www.irf.com

11/11/08

12 3 4 5 6 7...10

中文翻译

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IRFS4115PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFS4115TRLPBF	INFINEON	类似代替	High Efficiency Synchronous Rectification in SMPS
SUM75N15-18P-E3	VISHAY	功能相似	N-Channel 150-V (D-S) MOSFET

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