5秒后页面跳转
SUM75N15-18P-E3 PDF预览

SUM75N15-18P-E3

更新时间: 2024-11-25 06:14:59
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 118K
描述
N-Channel 150-V (D-S) MOSFET

SUM75N15-18P-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.8Is Samacsys:N
雪崩能效等级(Eas):125 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):312.5 W最大脉冲漏极电流 (IDM):180 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Silver (Ag)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SUM75N15-18P-E3 数据手册

 浏览型号SUM75N15-18P-E3的Datasheet PDF文件第2页浏览型号SUM75N15-18P-E3的Datasheet PDF文件第3页浏览型号SUM75N15-18P-E3的Datasheet PDF文件第4页浏览型号SUM75N15-18P-E3的Datasheet PDF文件第5页浏览型号SUM75N15-18P-E3的Datasheet PDF文件第6页 
SUM75N15-18P  
Vishay Siliconix  
N-Channel 150-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
V(BR)DSS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
100 % Rg and UIS Tested  
75d  
0.018 at VGS = 10 V  
RoHS  
COMPLIANT  
150  
64  
APPLICATIONS  
Primary Side Switch  
Power Supplies  
D
TO-263  
G
G
D S  
Top View  
S
Ordering Information: SUM75N15-18P-E3 (Lead (Pb)-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
150  
20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
75d  
70  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
IDM  
IAS  
Pulsed Drain Current  
Avalanche Current  
180  
50  
Single Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
125  
mJ  
W
312.5b  
3.12  
Maximum Power Dissipationa  
PD  
TA = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
0.4  
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
Document Number: 69995  
S-82349-Rev. B, 22-Sep-08  
www.vishay.com  
1

SUM75N15-18P-E3 替代型号

型号 品牌 替代类型 描述 数据表
IRFS4115PBF INFINEON

功能相似

HEXFET Power MOSFET
IRFS4321PBF INFINEON

功能相似

HEXFET Power MOSFET

与SUM75N15-18P-E3相关器件

型号 品牌 获取价格 描述 数据表
SUM8.2F SSDI

获取价格

HIGH VOLTAGE RECTIFIER
SUM8.2FS SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM8.2FSMS SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM8.2FSMSS SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM8.2FSMSTX SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM8.2FSMSTXV SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM8.2FTXV SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM80090E VISHAY

获取价格

N-Channel 150 V (D-S) MOSFET
SUM80090E-GE3 VISHAY

获取价格

Power Field-Effect Transistor, 128A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon,
SUM80F SSDI

获取价格

500 mA 6,000 thru 9,000 VOLTS 180 ns FAST RECOVERY RECTIFIER