是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | LEAD FREE, PLASTIC, D2PAK-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.14 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 830 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (Abs) (ID): | 99 A |
最大漏极电流 (ID): | 99 A | 最大漏源导通电阻: | 0.0121 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 375 W | 最大脉冲漏极电流 (IDM): | 396 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | MATTE TIN OVER NICKEL |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS4127 | INFINEON |
获取价格 |
200V 单个 N 通道 HEXFET Power MOSFET 开关, 采用D2-Pa | |
IRFS4127PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRFS4127TRLPBF | INFINEON |
获取价格 |
High Efficiency Synchronous Rectification in SMPS | |
IRFS41N15D | INFINEON |
获取价格 |
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) | |
IRFS41N15DPBF | INFINEON |
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HEXFET Power MOSFET | |
IRFS41N15DTRL | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 41A I(D) | TO-263AB | |
IRFS41N15DTRLP | INFINEON |
获取价格 |
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS41N15DTRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS41N15DTRR | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 41A I(D) | TO-263AB | |
IRFS41N15DTRRP | INFINEON |
获取价格 |
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me |