5秒后页面跳转
IRFS4127TRLPBF PDF预览

IRFS4127TRLPBF

更新时间: 2024-09-10 11:48:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
10页 356K
描述
High Efficiency Synchronous Rectification in SMPS

IRFS4127TRLPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.86
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):72 A最大漏极电流 (ID):72 A
最大漏源导通电阻:0.022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):375 W
最大脉冲漏极电流 (IDM):300 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFS4127TRLPBF 数据手册

 浏览型号IRFS4127TRLPBF的Datasheet PDF文件第2页浏览型号IRFS4127TRLPBF的Datasheet PDF文件第3页浏览型号IRFS4127TRLPBF的Datasheet PDF文件第4页浏览型号IRFS4127TRLPBF的Datasheet PDF文件第5页浏览型号IRFS4127TRLPBF的Datasheet PDF文件第6页浏览型号IRFS4127TRLPBF的Datasheet PDF文件第7页 
PD - 96177  
IRFS4127PbF  
IRFSL4127PbF  
HEXFET® Power MOSFET  
Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
VDSS  
200V  
18.6m  
22m  
RDS(on) typ.  
G
max.  
l Hard Switched and High Frequency Circuits  
ID  
72A  
S
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
D
D
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
D
S
G
G
D2Pak  
IRFS4127PbF  
TO-262  
IRFSL4127PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
72  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
51  
300  
375  
2.5  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
W/°C  
V
VGS  
± 20  
57  
Gate-to-Source Voltage  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
250  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.4  
Units  
RθJC  
Junction-to-Case  
°C/W  
RθJA  
–––  
40  
Junction-to-Ambient  
www.irf.com  
1
09/16/08  

IRFS4127TRLPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFS4127PBF INFINEON

完全替代

HEXFET Power MOSFET

与IRFS4127TRLPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFS41N15D INFINEON

获取价格

Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
IRFS41N15DPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFS41N15DTRL ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 41A I(D) | TO-263AB
IRFS41N15DTRLP INFINEON

获取价格

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFS41N15DTRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFS41N15DTRR ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 41A I(D) | TO-263AB
IRFS41N15DTRRP INFINEON

获取价格

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFS41N15DTRRPBF INFINEON

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFS41N15TRLDPBF INFINEON

获取价格

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFS41N15TRRDPBF INFINEON

获取价格

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me