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IRFS340B PDF预览

IRFS340B

更新时间: 2024-10-01 22:40:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 673K
描述
400V N-Channel MOSFET

IRFS340B 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-3PF包装说明:TO-3PF, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.72Is Samacsys:N
雪崩能效等级(Eas):450 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.54 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):85 W
最大脉冲漏极电流 (IDM):32 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFS340B 数据手册

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November 2001  
IRFS340B  
400V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supplies and  
electronic lamp ballasts based on half bridge.  
8A, 400V, R  
= 0.54@V = 10 V  
DS(on) GS  
Low gate charge ( typical 41 nC)  
Low Crss ( typical 35 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
G!  
TO-3PF  
IRFS Series  
G D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRFS340B  
400  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
8.0  
A
D
C
- Continuous (T = 100°C)  
5.1  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
32  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
450  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
8.0  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
8.5  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
P
Power Dissipation (T = 25°C)  
85  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.68  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.46  
40  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
--  
©2001 Fairchild Semiconductor Corporation  
Rev. B, November 2001  

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