Datasheet > IRFS3607

IRFS3607

更新时间： 2023-09-03 20:38:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	326K
描述
75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

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中文翻译

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数据手册

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IRFS3607 数据手册

PD - 97308C

IRFB3607PbF

IRFS3607PbF

Applications

l High Efficiency Synchronous Rectification in

IRFSL3607PbF

HEXFET^®Power MOSFET

SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

75V

7.34m

9.0m

80A

Benefits

I_D

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

D²Pak

TO-262

TO-220AB

IRFB3607PbF

IRFS3607PbF

IRFSL3607PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

310

140

0.96

± 20

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

T_J

Gate-to-Source Voltage

-55 to + 175

Operating Junction and

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

120

Avalanche Current

I_AR

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

Max.

1.045

–––

Units

R_

Junction-to-Case

–––

0.50

–––

Case-to-Sink, Flat Greased Surface, TO-220

°C/W

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

www.irf.com

01/20/12

12 3 4 5 6 7...12

中文翻译

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