IRFS3507TRL

更新时间： 2024-01-01 15:26:44

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
11页	414K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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IRFS3507TRL 数据手册

PD - 96903A

IRFB3507

IRFS3507

IRFSL3507

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

75V

7.0m

8.8m

Benefits

I_D

97A

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

G D S

D²Pak

IRFS3507

TO-262

IRFSL3507

TO-220AB

IRFB3507

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current d

Max.

97c

Units

69c

390

P_D@T_C= 25°C

190

Maximum Power Dissipation

Linear Derating Factor

1.3

W/°C

V_GS

± 20

Gate-to-Source Voltage

5.0

Peak Diode Recovery f

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

280

Avalanche Currentꢀc

I_AR

See Fig. 14, 15, 16a, 16b

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.77

–––

Units

R_θJC

Junction-to-Case k

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220 k

–––

Junction-to-Ambient (PCB Mount) , D Pak

www.irf.com

11/04/04

12 3 4 5 6 7...11

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