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IRFS3307TRLPBF

更新时间： 2024-10-02 13:01:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	413K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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数据手册
替代型号

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IRFS3307TRLPBF 数据手册

PD - 96901A

IRFB3307

IRFS3307

IRFSL3307

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

75V

5.0m

6.3m

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

I_D

130A

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

G D S

D²Pak

IRFS3307

TO-262

IRFSL3307

TO-220AB

IRFB3307

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current d

Max.

130c

91c

Units

510

P_D@T_C= 25°C

250

Maximum Power Dissipation

Linear Derating Factor

1.6

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

270

Avalanche Currentꢀc

I_AR

See Fig. 14, 15, 16a, 16b

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.61

–––

Units

R_θJC

Junction-to-Case k

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220 k

–––

Junction-to-Ambient (PCB Mount) , D Pak

www.irf.com

11/04/04

12 3 4 5 6 7...11

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IRFS3307TRLPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFS3307	INFINEON	类似代替	HEXFET Power MOSFET
IRFS3307PBF	INFINEON	功能相似	High Efficiency Synchronous Rectification in SMPS

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