Datasheet > IRFS3107TRRPBF

IRFS3107TRRPBF

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	371K
描述
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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数据手册

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IRFS3107TRRPBF 数据手册

PD -97144A

IRFS3107PbF

IRFSL3107PbF

HEXFET^®Power MOSFET

Applications

V_DSS

R_DS(on)typ.

75V

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

2.5m

3.0m

max.

I_D

230A

(Silicon Limited)

195A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRFS3107PbF

TO-262

IRFSL3107PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

230c

160

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

195

900

P_D@T_C= 25°C

370

Maximum Power Dissipation

Linear Derating Factor

2.5

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

300

Avalanche Currentꢀd

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

Units

R_θJC

Junction-to-Case kl

R_θJA

Junction-to-Ambient (PCB Mount) jk

–––

°C/W

www.irf.com

5/2/11

12 3 4 5 6 7...10

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