PD - 95872
IRF2907Z
AUTOMOTIVE MOSFET
IRF2907ZS
IRF2907ZL
HEXFET® Power MOSFET
Features
l
l
l
l
l
Advanced Process Technology
D
VDSS = 75V
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
RDS(on) = 4.5mΩ
G
Repetitive Avalanche Allowed up to Tjmax
ID = 75A
S
Description
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating. Thesefeaturescom-
bine to make this design an extremely efficient
andreliabledeviceforuseinAutomotiveapplica-
tions and a wide variety of other applications.
D2Pak
IRF2907ZS
TO-262
IRF2907ZL
TO-220AB
IRF2907Z
Absolute Maximum Ratings
Parameter
Max.
170
120
75
Units
A
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
D
D
D
Continuous Drain Current, VGS @ 10V (See Fig. 9)
(Package Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
680
330
DM
P
@TC = 25°C
W
Maximum Power Dissipation
Linear Derating Factor
D
2.2
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
EAS
300
690
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested)
IAR
See Fig.12a,12b,15,16
A
EAR
mJ
°C
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Typ.
–––
Max.
0.45
–––
62
Units
°C/W
Parameter
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
06/17/04