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IRF2907ZS-7PPBF_06

更新时间： 2024-11-05 03:09:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 670K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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IRF2907ZS-7PPBF_06 数据手册

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PD - 97031C  
IRF2907ZS-7PPbF  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
D
VDSS = 75V  
Repetitive Avalanche Allowed up to Tjmax  
‰
RDS(on) = 3.8mΩ  
G
Description  
S
ID = 160A  
Specificallydesignedforhighcurrent,highreliability  
applications, this HEXFET® Power MOSFET uti-  
lizesthelatestprocessingtechniquesandadvanced  
packaging technology to achieve extremely low on-  
resistance and world -class current ratings. Addi-  
tional features of this design are a 175°C junction  
operating temperature, fast switching speed and  
improved repetitive avalanche rating . These fea-  
tures combine to make this design an extremely  
efficient and reliable device for use in Server &  
TelecomOR'ing, AutomotiveandlowvoltageMotor  
Drive Applications.  
S (Pin 2, 3, 5, 6, 7)  
G (Pin 1)  
Absolute Maximum Ratings  
Parameter  
Max.  
180  
120  
160  
700  
300  
Units  
A
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
D
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
D
2.0  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
160  
410  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (tested)  
IAR  
EAR  
See Fig.12a,12b,15,16  
A
mJ  
°C  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.50  
–––  
62  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
12/07/06  
1234567...11

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