Datasheet > IRF2807ZL

IRF2807ZL

更新时间： 2024-09-13 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
12页	4640K
描述
AUTOMOTIVE MOSFET Advanced Process Technology

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IRF2807ZL 数据手册

IRF2807Z

AUTOMOTIVE MOSFET

IRF2807ZS

IRF2807ZL

www.kersemi.com

Features

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

HEXFET^®Power MOSFET

V_DSS= 75V

Repetitive Avalanche Allowed up to Tjmax

R_DS(on)= 9.4mΩ

Description

I_D= 75A

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

turesofthisdesign area175°Cjunctionoperating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient

and reliable device for use in Automotive applica-

tions and a wide variety of other applications.

D²Pak

TO-262

IRF2807ZL

TO-220AB

IRF2807Z

IRF2807ZS

Absolute Maximum Ratings

Parameter

Max.

Units

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

350

170

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

1.1

W/°C

± 20

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

160

200

E_AS(tested)

Avalanche Current

I_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

E_AR

°C

Operating Junction and

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.90

–––

Units

R_θ

Junction-to-Case

°C/W

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

12 3 4 5 6 7...12

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IRF2807ZPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)
IRF2807ZS	KERSEMI	获取价格	AUTOMOTIVE MOSFET Advanced Process Technology
IRF2807ZS	INFINEON	获取价格	Advanced Process Technology
IRF2807ZSPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)
IRF2807ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF2807ZSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF2807ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF2807ZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF280ZLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me