IRF2807LPBF

更新时间： 2024-12-01 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	269K
描述
HEXFET Power MOSFET

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IRF2807LPBF 数据手册

PD - 95945

IRF2807SPbF

IRF2807LPbF

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Description

HEXFET^®Power MOSFET

V_DSS= 75V

R_DS(on)= 13mΩ

I_D= 82A

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

knownfor,providesthedesignerwithanextremelyefficient

andreliabledeviceforuseinawidevarietyofapplications.

The D²Pak is a surface mount power package capable of

accommodatingdiesizesuptoHEX-4. Itprovidesthehighest

powercapabilityandthelowestpossibleon-resistanceinany

existing surface mount package. The D²Pak is suitable for

highcurrentapplicationsbecauseofitslowinternalconnection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

D²Pak

TO-262

IRF2807SPbF

IRF2807LPbF

The through-hole version (IRF2807L) is available for low-

profile applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

280

P_D@T_C= 25°C

Power Dissipation

230

W/°C

Linear Derating Factor

1.5

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.9

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient (PCB mount)**

–––

www.irf.com

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与IRF2807LPBF相关器件

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IRF2807PBF	INFINEON	获取价格	Advanced Process Technology
IRF2807S	INFINEON	获取价格	HEXFET Power MOSFET
IRF2807SPBF	KERSEMI	获取价格	Advanced Process Technology Ultra Low On-Resistance
IRF2807SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF2807STRL	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRF2807STRLPBF	INFINEON	获取价格	Advanced Process Technology
IRF2807STRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRF2807STRRPBF	INFINEON	获取价格	暂无描述
IRF2807Z	KERSEMI	获取价格	AUTOMOTIVE MOSFET Advanced Process Technology
IRF2807Z	INFINEON	获取价格	Advanced Process Technology