是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | LEAD FREE, PLASTIC PACKAGE-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 0.7 |
其他特性: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 雪崩能效等级(Eas): | 340 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 75 V | 最大漏极电流 (Abs) (ID): | 82 A |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.013 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 250 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 230 W | 最大脉冲漏极电流 (IDM): | 280 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
AUIRF2807 | INFINEON |
类似代替 |
Advanced Planar Technology, Low On-Resistance | |
IRFZ48VPBF | INFINEON |
类似代替 |
Advanced Process Technology | |
IRF540NPBF | INFINEON |
类似代替 |
HEXFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF2807S | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF2807SPBF | KERSEMI |
获取价格 |
Advanced Process Technology Ultra Low On-Resistance | |
IRF2807SPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF2807STRL | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Met | |
IRF2807STRLPBF | INFINEON |
获取价格 |
Advanced Process Technology | |
IRF2807STRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Met | |
IRF2807STRRPBF | INFINEON |
获取价格 |
暂无描述 | |
IRF2807Z | KERSEMI |
获取价格 |
AUTOMOTIVE MOSFET Advanced Process Technology | |
IRF2807Z | INFINEON |
获取价格 |
Advanced Process Technology | |
IRF2807ZHR | INFINEON |
获取价格 |
暂无描述 |