是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | LEAD FREE PACKAGE-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 0.69 | Samacsys Confidence: | 4 |
Samacsys Status: | Released | Samacsys PartID: | 361265 |
Samacsys Pin Count: | 3 | Samacsys Part Category: | Transistor |
Samacsys Package Category: | Transistor Outline, Vertical | Samacsys Footprint Name: | TO220AB_2 |
Samacsys Released Date: | 2017-07-16 22:03:44 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 185 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 33 A |
最大漏极电流 (ID): | 33 A | 最大漏源导通电阻: | 0.044 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 250 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 130 W | 最大脉冲漏极电流 (IDM): | 110 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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