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IRF540NPBF PDF预览

IRF540NPBF

更新时间: 2024-11-30 21:53:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
8页 150K
描述
HEXFET Power MOSFET

IRF540NPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.69Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:361265
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO220AB_2
Samacsys Released Date:2017-07-16 22:03:44Is Samacsys:N
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):185 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):33 A
最大漏极电流 (ID):33 A最大漏源导通电阻:0.044 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):130 W最大脉冲漏极电流 (IDM):110 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF540NPBF 数据手册

 浏览型号IRF540NPBF的Datasheet PDF文件第2页浏览型号IRF540NPBF的Datasheet PDF文件第3页浏览型号IRF540NPBF的Datasheet PDF文件第4页浏览型号IRF540NPBF的Datasheet PDF文件第5页浏览型号IRF540NPBF的Datasheet PDF文件第6页浏览型号IRF540NPBF的Datasheet PDF文件第7页 
PD - 94812  
IRF540NPbF  
HEXFET® Power MOSFET  
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 100V  
RDS(on) = 44mΩ  
G
Fully Avalanche Rated  
Lead-Free  
ID = 33A  
S
Description  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220 contribute  
to its wide acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
33  
23  
A
110  
PD @TC = 25°C  
Power Dissipation  
130  
W
W/°C  
V
Linear Derating Factor  
0.87  
± 20  
16  
VGS  
IAR  
Gate-to-Source Voltage  
Avalanche Currentꢀ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energyꢀ  
Peak Diode Recovery dv/dt ꢁ  
Operating Junction and  
13  
mJ  
V/ns  
7.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.50  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.15  
–––  
62  
°C/W  
www.irf.com  
1
11/3/03  

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