IRF2805

更新时间： 2024-12-01 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
9页	152K
描述
AUTOMOTIVE MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRF2805 数据手册

PD - 94428

IRF2805

AUTOMOTIVE MOSFET

HEXFET^®Power MOSFET

Typical Applications

Climate Control, ABS, Electronic Braking,

V_DSS= 55V

Windshield Wipers

Features

_DS(on)= 4.7mΩ

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

I_D= 75A

Description

SpecificallydesignedforAutomotiveapplications, thisHEXFET^®Power

MOSFET utilizes the latest processing techniques to achieve extremely

lowon-resistancepersiliconarea. Additionalfeaturesofthisdesign are

a 175°C junction operating temperature, fast switching speed and im-

provedrepetitiveavalancherating.Thesefeaturescombinetomakethis

design an extremely efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon limited)

Continuous Drain Current, V_GS@ 10V (See Fig.9)

Continuous Drain Current, V_GS@ 10V (Package limited)

Pulsed Drain Current

175

120

700

330

2.2

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

± 20

450

1220

E_AS

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(6 sigma)

I_AR

See Fig.12a, 12b, 15, 16

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1 (10)

N•m (lbf•in)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.45

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com

8/8/02

12 3 4 5 6 7...9

中文翻译

下载PDF

IRF2805 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF2805	INFINEON	功能相似	ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE

与IRF2805相关器件

型号	品牌	获取价格	描述	数据表
IRF2805L	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF2805LPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF2805PBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF2805S	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF2805SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF2805SPBF_15	INFINEON	获取价格	Advanced Process Technology
IRF2805STRLPBF	INFINEON	获取价格	Industrial Motor Drive
IRF2805STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Me
IRF2807	FREESCALE	获取价格	HEXFET Power MOSFET
IRF2807	INFINEON	获取价格	Power MOSFET(Vdss=75V, Id=82A)