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IRF2805 PDF预览

IRF2805

更新时间: 2024-10-30 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 152K
描述
AUTOMOTIVE MOSFET

IRF2805 数据手册

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PD - 94428  
IRF2805  
AUTOMOTIVE MOSFET  
HEXFET® Power MOSFET  
Typical Applications  
D
l
Climate Control, ABS, Electronic Braking,  
VDSS = 55V  
Windshield Wipers  
Features  
R
DS(on) = 4.7mΩ  
G
l
l
l
l
l
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
ID = 75A  
S
Description  
SpecificallydesignedforAutomotiveapplications, thisHEXFET® Power  
MOSFET utilizes the latest processing techniques to achieve extremely  
lowon-resistancepersiliconarea. Additionalfeaturesofthisdesign are  
a 175°C junction operating temperature, fast switching speed and im-  
provedrepetitiveavalancherating.Thesefeaturescombinetomakethis  
design an extremely efficient and reliable device for use in Automotive  
applications and a wide variety of other applications.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon limited)  
Continuous Drain Current, VGS @ 10V (See Fig.9)  
Continuous Drain Current, VGS @ 10V (Package limited)  
Pulsed Drain Current   
175  
120  
75  
A
700  
330  
2.2  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
± 20  
450  
1220  
EAS  
Single Pulse Avalanche Energy‚  
Single Pulse Avalanche Energy Tested Value‡  
Avalanche Current  
mJ  
EAS (6 sigma)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
TJ  
Repetitive Avalanche Energy†  
Operating Junction and  
mJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
1.1 (10)  
N•m (lbf•in)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.45  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
HEXFET(R) is a registered trademark of International Rectifier.  
www.irf.com  
1
8/8/02  

IRF2805 替代型号

型号 品牌 替代类型 描述 数据表
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