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AUIRF2805 PDF预览

AUIRF2805

更新时间： 2024-11-30 12:52:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 234K
描述
ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE

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中文翻译

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AUIRF2805 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：7.6
Is Samacsys：N其他特性：AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级（Eas）：1220 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：75 A最大漏极电流 (ID)：75 A
最大漏源导通电阻：0.0047 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：330 W
最大脉冲漏极电流 (IDM)：700 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF2805 数据手册

 浏览型号AUIRF2805的Datasheet PDF文件第2页浏览型号AUIRF2805的Datasheet PDF文件第3页浏览型号AUIRF2805的Datasheet PDF文件第4页浏览型号AUIRF2805的Datasheet PDF文件第5页浏览型号AUIRF2805的Datasheet PDF文件第6页浏览型号AUIRF2805的Datasheet PDF文件第7页 
PD - 97690A  
AUTOMOTIVE GRADE  
AUIRF2805  
HEXFET® Power MOSFET  
Features  
l Advanced Planar Technology  
l Low On-Resistance  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
D
V(BR)DSS  
RDS(on) typ.  
55V  
3.9m  
4.7m  
max  
G
ID (Silicon Limited)  
175A  
75A  
l Lead-Free, RoHS Compliant  
l AutomotiveQualified*  
S
ID (Package Limited)  
Description  
D
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
S
D
G
TO-220AB  
AUIRF2805  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
175  
120  
75  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
A
@ T = 100°C  
C
@ T = 25°C  
C
700  
DM  
330  
2.2  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
± 20  
V
GS  
EAS  
AS (tested)  
450  
1220  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
IAR  
See Fig. 12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
T
T
Operating Junction and  
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.45  
–––  
62  
Units  
RJC  
RCS  
RJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
12/14/11  
1234567...12

中文翻译

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AUIRF2805 替代型号

型号 品牌 替代类型 描述 数据表
IRF2805PBF INFINEON

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IPP100N06S205AKSA1 INFINEON

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IRF2805 INFINEON

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