Datasheet > IRF2805SPBF_15

IRF2805SPBF_15

更新时间： 2024-12-02 01:19:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	337K
描述
Advanced Process Technology

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数据手册

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IRF2805SPBF_15 数据手册

PD - 95944A

IRF2805SPbF

IRF2805LPbF

HEXFET^®Power MOSFET

Typical Applications

Industrial Motor Drive

Features

V_DSS= 55V

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

R_DS(on)= 4.7mΩ

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

I_D= 135A

Description

This HEXFET® Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistancepersiliconarea. Additionalfeaturesofthis

product area175°Cjunctionoperatingtemperature,

fastswitchingspeedandimprovedrepetitiveavalanche

rating . These features combine to make this design

anextremelyefficientandreliabledeviceforuseina

wide variety of applications.

D²Pak

IRF2805SPbF

TO-262

IRF2805LPbF

Absolute Maximum Ratings

Parameter

Max.

135

700

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

Gate-to-Source Voltage

± 20

380

E_AS

Single Pulse Avalanche Energy

E_AS(6 sigma)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

1220

I_AR

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

2.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient(PCB Mounted, steady state)**

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com

07/22/10

12 3 4 5 6 7...11

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