IRF2805L

更新时间： 2024-10-29 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	225K
描述
AUTOMOTIVE MOSFET

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数据手册

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IRF2805L 数据手册

PD - 94428

IRF2805S

IRF2805L

AUTOMOTIVE MOSFET

Typical Applications

HEXFET^®Power MOSFET

●

ClimateControl

ABS

Electronic Braking

WindshieldWipers

V_DSS= 55V

Features

●

Advanced Process Technology

_DS(on)= 4.7mΩ

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

I_D= 135A

Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisproduct area175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and reliable

deviceforuseinAutomotiveapplicationsandawidevariety

of other applications.

D²Pak

IRF2805S

TO-262

IRF2805L

Absolute Maximum Ratings

Parameter

Max.

135

700

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

Gate-to-Source Voltage

± 20

380

E_AS

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(6 sigma)

1220

I_AR

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

2.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient(PCB Mounted, steady state)**

–––

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com

06/10/02

12 3 4 5 6 7...11

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