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IRF2804S-7PTRLPBF

更新时间： 2024-10-30 12:58:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	263K
描述
Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-7

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PD - 96891

AUTOMOTIVE MOSFET

IRF2804S-7P

HEXFET^®Power MOSFET

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

V_DSS= 40V

Repetitive Avalanche Allowed up to Tjmax

R_DS(on)= 1.6mΩ

Description

I_D= 160A

S (Pin 2, 3 ,5,6,7)

G (Pin 1)

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

tures of this design are a 175°C junction operat-

ing temperature, fast switching speed and im-

proved repetitive avalanche rating . These fea-

tures combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applica-

tions.

Absolute Maximum Ratings

Parameter

Max.

Units

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

320

@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (See Fig. 9)

230

160

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

1360

330

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

2.2

W/°C

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy (Thermally Limited)

E_AS

630

1050

Single Pulse Avalanche Energy Tested Value

Avalanche Current

_AS(tested)

I_AR

E_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

Operating Junction and

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.50

–––

Units

°C/W

Junction-to-Case

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

Junction-to-Ambient (PCB Mount, steady state)

–––

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

9/6/04

12 3 4 5 6 7...10

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