Datasheet > IRF2804PBF

IRF2804PBF

更新时间： 2024-05-23 22:22:14

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	480K
描述
种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时）:75A;Vgs(th)(V):±20;漏源导通电阻:2.3mΩ@10V

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IRF2804PBF 数据手册

IRF2804

UMW

40 V

N-Channel

MOSFET

Features

•

V_DS(V) =40V

I_D=75A (V_GS= 10V)

•

R_DS(ON)<2.0mΩ (V _GS=10V)

R_DS(ON)<2.3mΩ (V _GS=4.5V)

Absolute Maximum Ratings

Parameter

Max.

Units

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

270

190

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

IDM

1080

300

Pulsed Drain Current

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

2.0

± 20

W/°C

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

540

1160

E_AS(tested)

Avalanche Current

I_AR

See Fig.12a,12b,15,16

°C

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

°C/W

0.50

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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