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AUIRF3205Z PDF预览

AUIRF3205Z

更新时间： 2024-11-29 08:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
14页 331K
描述
HEXFET? Power MOSFET

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中文翻译

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AUIRF3205Z 数据手册

 浏览型号AUIRF3205Z的Datasheet PDF文件第2页浏览型号AUIRF3205Z的Datasheet PDF文件第3页浏览型号AUIRF3205Z的Datasheet PDF文件第4页浏览型号AUIRF3205Z的Datasheet PDF文件第5页浏览型号AUIRF3205Z的Datasheet PDF文件第6页浏览型号AUIRF3205Z的Datasheet PDF文件第7页 
PD - 97542  
AUTOMOTIVE GRADE  
AUIRF3205Z  
AUIRF3205ZS  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to  
Tjmax  
D
S
V(BR)DSS  
55V  
6.5m  
RDS(on) max.  
Ω
G
ID (Silicon Limited)  
ID (Package Limited)  
110A  
75A  
●
●
Lead-Free,RoHSCompliant  
Automotive Qualified *  
Description  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of  
this design are a 175°C junction operating tempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
this design an extremely efficient and reliable device  
for use in Automotive applications and a wide variety  
of other applications.  
D
D
S
S
D
G
D
G
D2Pak  
TO-220AB  
AUIRF3205Z  
AUIRF3205ZS  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.  
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power  
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise  
specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Max.  
110  
78  
Units  
(Silicon Limited)  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
A
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
@ T = 25°C  
C
75  
440  
DM  
P
@T = 25°C  
C
Power Dissipation  
170  
1.1  
W
W/°C  
V
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
± 20  
GS  
EAS  
180  
250  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
EAS (tested )  
Avalanche Current  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
300  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.90  
–––  
62  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/23/2010  
1234567...14

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AUIRF3205Z 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF3205 INFINEON

类似代替

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF3205ZPBF INFINEON

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 AUTOMOTIVE MOSFET
IRF3205PBF INFINEON

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 HEXFET Power MOSFET

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