AUIRF2903ZSTRR

更新时间： 2024-11-30 13:00:11

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英飞凌 - INFINEON		/
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AUIRF2903ZSTRR 数据手册

PD-96379

AUIRF2903Z

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

V_(BR)DSS

30V

1.9m

Advanced Process Technology

UltraLowOn-Resistance

R_DS(on)typ.

175°COperatingTemperature

Fast Switching

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

2.4mΩ

260A

160A

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating . These features combine to make

thisdesignanextremelyefficientandreliabledeviceforusein

Automotiveapplicationsandawidevarietyofotherapplications.

TO-220AB

AUIRF2903Z

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.

The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient

temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

(Silicon Limited)

(Package Limited)

260

@ T = 25°C

180

@ T = 100°C

160

@ T = 25°C

1020

290

Power Dissipation

@T = 25°C

W/°C

2.0

Linear Derating Factor

± 20

Gate-to-Source Voltage

E_AS

290

820

Single Pulse Avalanche Energy (Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

300 (1.6mm from case )

10 lbf in (1.1N m)

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

0.51

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

06/22/11

12 3 4 5 6 7...12

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