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AUIRF2804STRR7P

更新时间： 2024-02-21 20:22:25
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 255K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRF2804STRR7P 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
风险等级：5.76配置：Single
最大漏极电流 (Abs) (ID)：240 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：330 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

AUIRF2804STRR7P 数据手册

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AUTOMOTIVE GRADE  
AUIRF2804S-7P  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
●
●
Advanced Process Technology  
D
V(BR)DSS  
40V  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
RDS(on) max.  
1.6m  
320A  
G
ID (Silicon Limited)  
ID (Package Limited)  
S
240A  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest process-  
ing techniques to achieve extremely low on-resistance  
per silicon area. Additional features of this design are  
a 175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating .  
These features combine to make this design an ex-  
tremely efficient and reliable device for use in Automo-  
tive applications and a wide variety of other applica-  
tions.  
D
S
D
S
S
S
S
G
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
320  
Units  
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
D
D
D
230  
240  
1360  
330  
DM  
P
D
@TC = 25°C  
Maximum Power Dissipation  
W
Linear Derating Factor  
Gate-to-Source Voltage  
2.2  
± 20  
W/°C  
V
V
GS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
EAS  
630  
1050  
mJ  
EAS (tested)  
Avalanche Current  
IAR  
See Fig.12a,12b,15,16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
°C  
T
T
Operating Junction and  
-55 to + 175  
300  
J
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.50  
–––  
62  
Units  
°C/W  
Junction-to-Case  
R  
R  
R  
R  
JC  
CS  
JA  
JA  
Case-to-Sink, Flat, Greased Surface  
0.50  
–––  
Junction-to-Ambient  
Junction-to-Ambient (PCB Mount, steady state)  
–––  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
October 26, 2012  
1234567...13

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