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AUIRF2804STRL7P

更新时间： 2024-01-28 20:32:02
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 747K
描述
Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7

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AUIRF2804STRL7P 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-7Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.23其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE
雪崩能效等级（Eas）：1050 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：240 A最大漏极电流 (ID)：240 A
最大漏源导通电阻：0.0016 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263CBJESD-30 代码：R-PSSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：330 W
最大脉冲漏极电流 (IDM)：1360 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF2804STRL7P 数据手册

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AUIRF2804  
AUIRF2804S  
AUIRF2804L  
AUTOMOTIVE GRADE  
Features  
VDSS  
40V  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
1.5m  
2.0m  
270A  
195A  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
D
D
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per silicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitive avalanche rating. These features combine to make  
this design an extremely efficient and reliable device for use in  
Automotive applications and wide variety of other applications.  
S
D
S
S
G
D
G
G
G
D
S
Gate  
Drain  
Source  
Base part number  
Package Type  
Standard Pack  
Form  
Tube  
Orderable Part Number  
Quantity  
50  
AUIRF2804  
AUIRF2804L  
TO-220  
TO-262  
AUIRF2804  
AUIRF2804L  
Tube  
50  
Tube  
Tape and Reel Left  
50  
800  
AUIRF2804S  
AUIRF2804STRL  
AUIRF2804S  
D2-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
270  
ID @ TC = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
190  
195  
A
IDM  
Pulsed Drain Current   
Maximum Power Dissipation  
Linear Derating Factor  
1080  
300  
2.0  
PD @TC = 25°C  
W
W/°C  
V
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
540  
mJ  
EAS (tested)  
Single Pulse Avalanche Energy Tested Value   
Avalanche Current   
1160  
IAR  
See Fig.15,16, 12a, 12b  
A
EAR  
TJ  
Repetitive Avalanche Energy   
mJ  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Mounting torque, 6-32 or M3 screw  
300  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case   
Typ.  
–––  
Max.  
0.50  
–––  
62  
Units  
RJC  
RCS  
RJA  
RJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
Junction-to-Ambient ( PCB Mount, steady state)   
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-9-30  
1234567...13

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AUIRF2804STRL7P 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF2804S-7P INFINEON

类似代替

 HEXFET® Power MOSFET

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