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AUIRF2903Z PDF预览

AUIRF2903Z

更新时间： 2024-11-30 12:53:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 211K
描述
AUTOMOTIVE GRADE

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中文翻译

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AUIRF2903Z 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.42其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
雪崩能效等级（Eas）：820 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：160 A最大漏极电流 (ID)：160 A
最大漏源导通电阻：0.0024 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：290 W
最大脉冲漏极电流 (IDM)：1020 A子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF2903Z 数据手册

 浏览型号AUIRF2903Z的Datasheet PDF文件第2页浏览型号AUIRF2903Z的Datasheet PDF文件第3页浏览型号AUIRF2903Z的Datasheet PDF文件第4页浏览型号AUIRF2903Z的Datasheet PDF文件第5页浏览型号AUIRF2903Z的Datasheet PDF文件第6页浏览型号AUIRF2903Z的Datasheet PDF文件第7页 
PD-96379  
AUIRF2903Z  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
V(BR)DSS  
D
30V  
1.9m  
l
Advanced Process Technology  
UltraLowOn-Resistance  
RDS(on) typ.  
Ω
l
l
l
l
l
l
175°COperatingTemperature  
Fast Switching  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
2.4mΩ  
260A  
160A  
G
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
S
D
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per silicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitive avalanche rating . These features combine to make  
thisdesignanextremelyefficientandreliabledeviceforusein  
Automotiveapplicationsandawidevarietyofotherapplications.  
S
D
G
TO-220AB  
AUIRF2903Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.  
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient  
temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
Units  
(Silicon Limited)  
(Silicon Limited)  
(Package Limited)  
260  
I
I
I
I
@ T = 25°C  
C
D
D
D
180  
@ T = 100°C  
C
A
160  
@ T = 25°C  
C
1020  
DM  
290  
Power Dissipation  
P
@T = 25°C  
C
W
W/°C  
V
D
2.0  
Linear Derating Factor  
± 20  
Gate-to-Source Voltage  
V
GS  
EAS  
290  
820  
Single Pulse Avalanche Energy (Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
Operating Junction and  
T
T
J
Storage Temperature Range  
°C  
STG  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
Max.  
0.51  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
–––  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/22/11  
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中文翻译

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AUIRF2903Z 替代型号

型号 品牌 替代类型 描述 数据表
IRF2903ZPBF INFINEON

类似代替

 AUTOMOTIVE MOSFET
AUIRF2903ZS INFINEON

功能相似

 Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, M
IRF2903ZSPBF INFINEON

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 AUTOMOTIVE MOSFET

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