5秒后页面跳转
捷配首页

Datasheet > AUIRF2804S-7PS-7P
AUIRF2804S-7PS-7P PDF预览

AUIRF2804S-7PS-7P

更新时间： 2024-02-28 20:05:36
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 286K
描述
Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7

阅读下载

中文翻译

获取价格

AUIRF2804S-7PS-7P 技术参数

生命周期：Active包装说明：ROHS COMPLIANT, D2PAK-7
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.66其他特性：ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：1050 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (ID)：240 A最大漏源导通电阻：0.0016 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XSSO-G6
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：1360 A
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF2804S-7PS-7P 数据手册

 浏览型号AUIRF2804S-7PS-7P的Datasheet PDF文件第2页浏览型号AUIRF2804S-7PS-7P的Datasheet PDF文件第3页浏览型号AUIRF2804S-7PS-7P的Datasheet PDF文件第4页浏览型号AUIRF2804S-7PS-7P的Datasheet PDF文件第5页浏览型号AUIRF2804S-7PS-7P的Datasheet PDF文件第6页浏览型号AUIRF2804S-7PS-7P的Datasheet PDF文件第7页 
PD - 97459  
AUTOMOTIVE GRADE  
AUIRF2804S-7P  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
D
V(BR)DSS  
40V  
1.6m  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
RDS(on) max.  
Ω
G
ID (Silicon Limited)  
ID (Package Limited)  
320A  
240A  
S
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest process-  
ing techniques to achieve extremely low on-resistance  
per silicon area. Additional features of this design are  
a 175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating .  
These features combine to make this design an ex-  
tremely efficient and reliable device for use in Automo-  
tive applications and a wide variety of other applica-  
tions.  
D
S
D
S
S
S
S
G
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Absolute Maximum Ratings  
Parameter  
Max.  
320  
Units  
A
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
D
D
D
230  
240  
1360  
330  
Pulsed Drain Current  
DM  
P
@TC = 25°C  
Maximum Power Dissipation  
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
2.2  
± 20  
W/°C  
V
V
GS  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
630  
1050  
mJ  
EAS (tested)  
Avalanche Current  
IAR  
See Fig.12a,12b,15,16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
°C  
T
J
Operating Junction and  
-55 to + 175  
300  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.50  
–––  
62  
Units  
°C/W  
Junction-to-Case  
Rθ  
JC  
Rθ  
CS  
Rθ  
JA  
Rθ  
JA  
Case-to-Sink, Flat, Greased Surface  
0.50  
–––  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
02/19/2010  
1234567...13

中文翻译

下载PDF

与AUIRF2804S-7PS-7P相关器件

型号 品牌 获取价格 描述 数据表
AUIRF2804S-7TRL INFINEON

获取价格

 		Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, M
AUIRF2804STRL INFINEON

获取价格

 		Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, M
AUIRF2804STRL7P INFINEON

获取价格

 		Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, M
AUIRF2804STRR7P INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF2804WL INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF2805 INFINEON

获取价格

 		ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE
AUIRF2805L INFINEON

获取价格

 		Advanced Planar Technology
AUIRF2805S INFINEON

获取价格

 		Advanced Planar Technology
AUIRF2805STRL INFINEON

获取价格

 		Advanced Planar Technology
AUIRF2805STRR INFINEON

获取价格

 		Advanced Planar Technology

与AUIRF2804S-7PS-7P相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证